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    IRF730 datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
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    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
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    IRF730 datasheet preview

    IRF730 Frequently Asked Questions (FAQs)

    • The IRF730 can operate from -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
    • To ensure the IRF730 is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current (IG) should be sufficient to charge the gate capacitance quickly.
    • The maximum continuous drain current (ID) rating for the IRF730 is 5A, but it can handle higher currents for short periods of time. The maximum pulsed drain current (IDM) is 15A.
    • To protect the IRF730 from overvoltage, a voltage clamp or a zener diode can be used to limit the maximum voltage applied to the drain-source pins. A voltage rating of 400V or higher is recommended.
    • The typical turn-on time (ton) for the IRF730 is around 10-20 ns, and the typical turn-off time (toff) is around 20-30 ns. However, these times can vary depending on the gate drive circuit and operating conditions.
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