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    Part Img IRF710PBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 2A TO-220AB
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    IRF710PBF datasheet preview

    IRF710PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF710PBF is -55°C to 175°C.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, a gate resistor (Rg) should be used to limit the gate current.
    • To minimize parasitic inductance and capacitance, the PCB layout should be designed to keep the drain and source pins as close as possible, and the gate pin should be routed away from the drain and source pins. Additionally, a ground plane should be used to reduce electromagnetic interference (EMI).
    • Yes, the IRF710PBF can be used in high-frequency switching applications up to 1 MHz. However, the user should ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation.
    • To protect the IRF710PBF from ESD, handling precautions should be taken, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, ESD protection devices, such as TVS diodes, can be used on the PCB to protect the device from ESD events.
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