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    Part Img IRF7105TR datasheet by International Rectifier

    • 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRF7105TR datasheet preview

    IRF7105TR Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF7105TR is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • To ensure proper biasing, make sure to provide a stable voltage supply to the gate-source voltage (Vgs) within the recommended range of 2V to 4V, and maintain a low impedance path to the drain-source voltage (Vds).
    • The recommended gate resistor value for the IRF7105TR is typically in the range of 1kΩ to 10kΩ, depending on the specific application and switching frequency. A higher value can help reduce power consumption, but may increase switching time.
    • Yes, the IRF7105TR is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.
    • To protect the IRF7105TR from overvoltage and overcurrent conditions, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent excessive current.
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