The maximum operating temperature range for the IRF6892STRPBF is -55°C to 175°C.
No, the IRF6892STRPBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
The recommended gate drive voltage for the IRF6892STRPBF is 10V to 15V, with a maximum gate-source voltage of ±20V.
While the IRF6892STRPBF is a high-performance device, it is not specifically designed for high-reliability applications. For such applications, it is recommended to use a device with a higher level of qualification, such as a QML or QPL device.
The thermal resistance of the IRF6892STRPBF is RθJC = 0.5°C/W and RθJA = 62°C/W.
