The maximum operating temperature range for the IRF6710S2TRPBF is -55°C to 150°C.
No, the IRF6710S2TRPBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
The recommended gate drive voltage for the IRF6710S2TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
While the IRF6710S2TRPBF is a high-performance device, it is not specifically designed for high-reliability applications. For such applications, it is recommended to use a device that is specifically qualified for high-reliability use, such as a device with a higher junction temperature rating and more stringent testing and screening.
Yes, the IRF6710S2TRPBF is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.