IRF6710S2TRPBF datasheet
by International Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
The maximum operating temperature range for the IRF6710S2TRPBF is -55°C to 150°C.
No, the IRF6710S2TRPBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
The recommended gate drive voltage for the IRF6710S2TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
While the IRF6710S2TRPBF is a high-performance device, it is not specifically designed for high-reliability applications. For such applications, it is recommended to use a device that is specifically qualified for high-reliability use, such as a device with a higher junction temperature rating and more stringent testing and screening.
Yes, the IRF6710S2TRPBF is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.
