A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; Similar to IRF6662 qualified for use with lead free solder shipped in tape and reel 4800 pieces
The maximum operating temperature range for the IRF6662TRPBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
The recommended gate drive voltage for the IRF6662TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRF6662TRPBF is suitable for switching regulator applications due to its low on-state resistance, high current capability, and fast switching times.
Handle the device with ESD-safe materials, use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.
