A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; Similar to IRF6645 qualified for use with lead free solder shipped in tape and reel 4800 pieces
The maximum operating temperature range for the IRF6645TRPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
To ensure proper cooling, make sure to provide a sufficient heat sink or thermal pad to dissipate heat generated by the device. The datasheet provides thermal resistance values (RθJA and RθJC) to help with thermal design. Additionally, consider the device's power dissipation (PD) and maximum junction temperature (Tj) when selecting a heat sink or thermal pad.
The recommended gate drive voltage for the IRF6645TRPBF is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
Yes, the IRF6645TRPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is designed to accommodate the high-frequency switching requirements.
To protect the IRF6645TRPBF from overvoltage and overcurrent conditions, consider using voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Additionally, ensure that the device is operated within its specified voltage and current ratings, and consider implementing overvoltage and overcurrent protection circuits in your design.
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