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    IRF630STRRPBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    IRF630STRRPBF datasheet preview

    IRF630STRRPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF630STRRPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
    • To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, keep the ambient temperature below 50°C and avoid high power dissipation.
    • The recommended gate drive voltage for the IRF630STRRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating.
    • Yes, the IRF630STRRPBF is suitable for high-frequency switching applications up to 1MHz, but be aware of the increased power losses and potential for electromagnetic interference (EMI). Ensure proper PCB layout, decoupling, and filtering to minimize EMI.
    • Use a voltage clamp or a zener diode to protect the device from overvoltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions. Also, ensure the device is operated within its safe operating area (SOA).
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