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    IRF630SPBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    IRF630SPBF datasheet preview

    IRF630SPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF630SPBF is -55°C to 175°C.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 200V to ensure reliable operation.
    • The recommended gate resistor value for the IRF630SPBF is typically between 1kΩ to 10kΩ, depending on the specific application and switching frequency.
    • To protect the IRF630SPBF from overvoltage and overcurrent conditions, it is recommended to use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
    • The maximum allowable power dissipation for the IRF630SPBF is 125W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other environmental factors.
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