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    Part Img IRF630NSTRLPBF datasheet by International Rectifier

    • 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF630NSTRL with Lead Free Packaging on Tape and Reel Left
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    IRF630NSTRLPBF datasheet preview

    IRF630NSTRLPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF630NSTRLPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
    • To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, keep the ambient temperature below 50°C and avoid hot spots on the PCB.
    • The recommended gate drive voltage for the IRF630NSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating.
    • Yes, the IRF630NSTRLPBF is suitable for high-frequency switching applications up to 1MHz, but be aware of the increased power losses and heat generation at higher frequencies. Ensure proper thermal management and consider using a gate driver with a high current capability.
    • To protect the IRF630NSTRLPBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage across the device, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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