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    Part Img IRF630NPBF datasheet by International Rectifier

    • 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF630N with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRF630NPBF datasheet preview

    IRF630NPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF630NPBF is -55°C to 175°C.
    • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
    • The maximum gate-source voltage that can be applied to the IRF630NPBF is ±20V.
    • Yes, the IRF630NPBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
    • To protect the IRF630NPBF from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the device is stored in an anti-static bag or container when not in use.
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