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    IRF630 datasheet by Harris Semiconductor

    • Power MOSFET Selection Guide
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRF630 datasheet preview

    IRF630 Frequently Asked Questions (FAQs)

    • The IRF630 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
    • To ensure the IRF630 is fully turned on, the gate-to-source voltage (Vgs) should be at least 10V for a logic-level gate drive, and 15V for a standard gate drive.
    • The maximum continuous drain current (ID) rating for the IRF630 is 9A, but it can handle up to 18A for short pulses (e.g., during switching transients).
    • To protect the IRF630 from overvoltage, use a voltage clamp or a zener diode to limit the maximum voltage to 200V, which is the absolute maximum rating for the device.
    • The recommended gate resistor value for the IRF630 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
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