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    Part Img IRF530NLPBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF530NL with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    IRF530NLPBF datasheet preview

    IRF530NLPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF530NLPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
    • To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, keep the ambient temperature below 50°C and avoid high power dissipation.
    • The recommended gate drive voltage for the IRF530NLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be careful not to exceed the maximum rating.
    • Yes, the IRF530NLPBF is suitable for high-frequency switching applications up to 1MHz, but be aware of the increased power losses and heat generation at higher frequencies. Ensure proper thermal management and consider using a gate driver with a high current capability.
    • To protect the IRF530NLPBF from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. Also, avoid touching the device's pins or leads, and use ESD-protected equipment during assembly and testing.
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