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    IRF431 datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
    • Scan
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRF431 datasheet preview

    IRF431 Frequently Asked Questions (FAQs)

    • The IRF431 can operate from -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
    • To ensure the IRF431 is fully turned on, the gate-to-source voltage (VGS) should be at least 10V, and the gate drive voltage should be sufficient to overcome the threshold voltage (Vth) of around 2-4V.
    • The maximum continuous drain current (ID) for the IRF431 is 3A, but it can handle up to 6A for short pulses (less than 100μs).
    • Use a voltage clamp or a zener diode to limit the voltage across the device, and consider adding a current sense resistor and a fuse to protect against overcurrent conditions.
    • Yes, the IRF431 is suitable for high-frequency switching applications up to 1MHz, but be aware of the device's switching losses, gate charge, and layout considerations to minimize ringing and EMI.
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