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    Part Img IRF3711PBF datasheet by International Rectifier

    • 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRF3711PBF datasheet preview

    IRF3711PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF3711PBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation.
    • The recommended gate drive voltage for the IRF3711PBF is between 10V to 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • To protect the IRF3711PBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage across the device, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • The recommended layout and routing for the IRF3711PBF involves keeping the high-frequency switching nodes (e.g. drain and source) as close as possible to the device, using short and wide traces, and minimizing the loop area to reduce electromagnetic interference (EMI).
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