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    IRF360 datasheet by International Rectifier

    • N-Channel HEXFET Transistors, 400 Volt, 0.20 Ohm
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    IRF360 datasheet preview

    IRF360 Frequently Asked Questions (FAQs)

    • The maximum SOA for the IRF360 is typically limited by the voltage and current ratings. The device can handle up to 400V and 30A, but the actual SOA will depend on the specific application and operating conditions.
    • Proper thermal management is crucial for the IRF360. Ensure good heat sinking, use a thermal interface material, and keep the device away from heat sources. The maximum junction temperature is 175°C, and the thermal resistance (RθJA) is 62°C/W.
    • The recommended gate drive voltage for the IRF360 is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance (RDS(on)), but be careful not to exceed the maximum gate-source voltage of ±20V.
    • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IRF360 from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • The typical turn-on time (ton) for the IRF360 is around 20-30 ns, and the typical turn-off time (toff) is around 50-60 ns. These times can vary depending on the gate drive voltage and the load conditions.
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