Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img IRF2807ZPBF datasheet by International Rectifier

    • 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF2807Z with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Powered by Findchips Logo Findchips

    IRF2807ZPBF datasheet preview

    IRF2807ZPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF2807ZPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
    • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
    • The recommended gate drive voltage for the IRF2807ZPBF is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V, but this may reduce the device's reliability and lifespan.
    • To protect the IRF2807ZPBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • Yes, the IRF2807ZPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to ensure that the device is properly cooled and that the gate drive circuit is optimized for high-frequency operation to minimize switching losses.
    Supplyframe Tracking Pixel