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    Part Img IRC530 datasheet by International Rectifier

    • Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
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    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRC530 datasheet preview

    IRC530 Frequently Asked Questions (FAQs)

    • The IRC530 can operate from -40°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
    • To ensure proper biasing, the IRC530 requires a minimum of 10V on the gate-source voltage (VGS) and a maximum of 20V. Additionally, the gate current (IG) should be limited to 100mA to prevent damage.
    • To minimize parasitic inductance and capacitance, it is recommended to use a compact PCB layout with short leads and a solid ground plane. The drain and source pins should be connected to the PCB with a low-inductance path, and the gate pin should be connected to a low-capacitance path.
    • Yes, the IRC530 is suitable for high-frequency switching applications up to 1MHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
    • To protect the IRC530 from overvoltage and overcurrent conditions, it is recommended to use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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