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    HGTP20N60C3R datasheet by Harris Semiconductor

    • 40A, 600V, Rugged UFS Series N-Channel IGBTs
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
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    HGTP20N60C3R datasheet preview

    HGTP20N60C3R Frequently Asked Questions (FAQs)

    • The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 1 inch x 1 inch, and using multiple vias to connect the thermal pad to an internal copper plane. This helps to dissipate heat efficiently and reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it is essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly heatsinked. Additionally, the device should be operated within the specified junction temperature range (TJ) of -55°C to 150°C.
    • The HGTP20N60C3R has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap or mat, and storing the devices in anti-static packaging.
    • Yes, the HGTP20N60C3R is designed to handle high dv/dt rates and can be used in switching applications. However, it is essential to follow the recommended gate drive circuitry and to ensure that the device is properly snubbed to prevent voltage overshoots.
    • The recommended gate drive voltage for the HGTP20N60C3R is 10-15V, and the recommended gate drive current is 1-2A. This ensures that the device turns on and off quickly and efficiently, and minimizes switching losses.
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