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    HGTD8P50G1 datasheet by Harris Semiconductor

    • 8A, 500V P-Channel IGBT
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    HGTD8P50G1 datasheet preview

    HGTD8P50G1 Frequently Asked Questions (FAQs)

    • The datasheet provides general guidelines, but for optimal thermal performance, it's recommended to use a 2-ounce copper PCB with a thermal relief pattern under the device. Additionally, ensure a minimum of 1-inch clearance around the device for airflow.
    • To handle high voltage spikes during turn-off, use a snubber circuit consisting of a resistor and capacitor in series, connected between the drain and source terminals. This helps to reduce voltage overshoot and ringing.
    • The recommended gate drive voltage is between 10V to 15V, with a current capability of at least 1A to ensure fast switching times and low losses. A gate driver with a high current capability and short rise/fall times is recommended.
    • Use a combination of overcurrent protection (OCP) and overvoltage protection (OVP) circuits. OCP can be implemented using a sense resistor and a comparator, while OVP can be achieved using a zener diode or a voltage supervisor IC.
    • The maximum allowed junction temperature is 150°C. Ensure it's not exceeded by providing adequate heat sinking, using a thermal interface material, and monitoring the device temperature using a thermocouple or thermal sensor.
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