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    Part Img DS1230Y-200IND+ datasheet by Maxim Integrated Products

    • 256k Nonvolatile SRAM
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8473.30.11.40
    • 8542.32
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    DS1230Y-200IND+ datasheet preview

    DS1230Y-200IND+ Frequently Asked Questions (FAQs)

    • The recommended PCB layout for the DS1230Y-200IND+ involves placing the device near the battery, using a solid ground plane, and keeping the VCC and GND pins as close as possible to the device. Additionally, the layout should minimize the length of the traces connecting the device to the battery and the load.
    • The DS1230Y-200IND+ has a built-in undervoltage lockout (UVLO) circuit that prevents the device from operating if the battery voltage is too low. The UVLO threshold is typically around 1.8V. If the battery voltage droops during startup, the device will not turn on until the voltage reaches the UVLO threshold.
    • Yes, the DS1230Y-200IND+ can be used in applications with high-ESR batteries. However, the device's performance may be affected by the high ESR, and the battery life may be reduced. It's recommended to use a battery with a low ESR to ensure optimal performance.
    • The DS1230Y-200IND+ has built-in overcharge and over-discharge protection circuits. The device monitors the battery voltage and current, and prevents overcharge by limiting the charge current when the battery voltage reaches a certain threshold. It also prevents over-discharge by disconnecting the load when the battery voltage falls below a certain threshold.
    • No, the DS1230Y-200IND+ is designed for single-cell battery applications. If you need to use multiple battery cells, you'll need to use a different device or a custom solution.
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