DRV5013AGQDBZR datasheet by Texas Instruments

DRV5013AGQDBZR Frequently Asked Questions (FAQs)

• What is the recommended PCB layout for the DRV5013AGQDBZR?
  A good PCB layout for the DRV5013AGQDBZR involves keeping the high-current paths short and wide, using a solid ground plane, and placing the decoupling capacitors close to the device. TI provides a recommended PCB layout in the datasheet and application notes.
• How do I choose the right inductor for the DRV5013AGQDBZR?
  Choose an inductor with a high saturation current rating, low DC resistance, and a suitable inductance value. The datasheet provides guidelines for inductor selection, and TI's inductor selection tool can also be used.
• What is the maximum ambient temperature for the DRV5013AGQDBZR?
  The maximum ambient temperature for the DRV5013AGQDBZR is 85°C, but the device can operate up to 150°C junction temperature. Derating is required for high-temperature operation.
• How do I protect the DRV5013AGQDBZR from overcurrent and overvoltage?
  Use a fuse or a current-sensing resistor to detect overcurrent, and a voltage supervisor or a Zener diode to detect overvoltage. The datasheet provides guidelines for overcurrent and overvoltage protection.
• Can I use the DRV5013AGQDBZR in a high-reliability or automotive application?
  Yes, the DRV5013AGQDBZR is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, additional testing and validation may be required for specific applications.