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    Part Img DMMT5551S-7-F datasheet by Diodes Incorporated

    • TRANS GP BJT NPN 160V 0.2A 6SOT-26 T/R
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    DMMT5551S-7-F datasheet preview

    DMMT5551S-7-F Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the DMMT5551S-7-F is a standard SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the anode (A) to a voltage source (e.g., VCC) and the cathode (K) to ground through a current-limiting resistor. The recommended bias voltage is between 1.9V and 5.5V.
    • The maximum allowable power dissipation for the DMMT5551S-7-F is 250mW. Ensure that the device is properly heat-sinked and operated within the recommended temperature range to prevent overheating.
    • While the DMMT5551S-7-F is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100MHz. However, the device's performance may degrade at higher frequencies due to internal capacitance and inductance.
    • To prevent electrostatic discharge (ESD) damage, handle the DMMT5551S-7-F with an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment. The device has an internal ESD protection diode, but external protection measures are still recommended.
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