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    Part Img DMG6898LSDQ-13 datasheet by Diodes Incorporated

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V 9.5A 8SO
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    DMG6898LSDQ-13 datasheet preview

    DMG6898LSDQ-13 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the DMG6898LSDQ-13 is a standard SOD-123 package with a 1.7mm x 1.3mm pad size, and a thermal pad for heat dissipation.
    • To ensure proper thermal management, use a thermal pad or heat sink with a thermal conductivity of at least 1 W/m-K, and ensure a good thermal interface between the device and the heat sink. Also, follow the recommended PCB layout and thermal design guidelines.
    • The maximum allowed voltage for the gate-source voltage (Vgs) is ±20V, but it's recommended to keep it between -5V to +15V for reliable operation.
    • Yes, the DMG6898LSDQ-13 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize switching losses and ringing.
    • Handle the device with an ESD wrist strap or mat, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.
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