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    DMG301NU-13 datasheet by Diodes Incorporated

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V .26A SOT-23
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
    • Find it at Findchips.com

    DMG301NU-13 datasheet preview

    DMG301NU-13 Frequently Asked Questions (FAQs)

    • A good PCB layout for the DMG301NU-13 should include a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a solid copper plane on the PCB.
    • To ensure proper biasing, the DMG301NU-13 requires a stable voltage supply and a bias resistor (Rb) connected between the base and emitter. The recommended bias resistor value is typically between 1kΩ to 10kΩ, depending on the specific application requirements.
    • To prevent ESD damage, handle the DMG301NU-13 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or leads, and use ESD-safe packaging and storage materials.
    • Yes, the DMG301NU-13 is suitable for high-frequency switching applications up to 100 MHz. However, ensure proper PCB layout, decoupling, and impedance matching to minimize ringing and ensure reliable operation.
    • To determine the maximum allowable power dissipation, calculate the device's power dissipation (PD) using the formula: PD = (Vcc x Ic) + (Vce x Ie). Then, ensure the calculated PD is within the device's maximum power dissipation rating (Pd) specified in the datasheet.
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