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    Part Img CY7C1565KV18-400BZXC datasheet by Cypress Semiconductor

    • 72-Mbit QDR -II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II+, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
    • Original
    • Yes
    • Unknown
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY7C1565KV18-400BZXC datasheet preview

    CY7C1565KV18-400BZXC Frequently Asked Questions (FAQs)

    • The CY7C1565KV18-400BZXC has an industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
    • To implement self-refresh mode, assert the SREF input low and ensure that the clock (CLK) is stopped. This will put the device into a low-power state, reducing power consumption.
    • The CY7C1565KV18-400BZXC supports a maximum clock frequency of 400 MHz, making it suitable for high-speed applications.
    • To handle data bus turnaround times, ensure that the data bus is tri-stated (high-impedance state) for at least one clock cycle before switching between read and write operations. This allows the bus to settle and prevents data corruption.
    • The CY7C1565KV18-400BZXC has a read latency of 2 clock cycles and a write latency of 1 clock cycle, making it suitable for high-performance applications.
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