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    CY7C1314KV18-250BZXI datasheet by Cypress Semiconductor

    • Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 250MHZ 165FBGA
    • Original
    • Yes
    • Unknown
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
    • Find it at Findchips.com

    CY7C1314KV18-250BZXI datasheet preview

    CY7C1314KV18-250BZXI Frequently Asked Questions (FAQs)

    • The CY7C1314KV18-250BZXI has an operating temperature range of -40°C to +85°C.
    • The CY7C1314KV18-250BZXI requires a 50-ohm termination resistor on the DDR3 interface. Additionally, the board design should ensure that the signal traces are impedance-controlled and matched to minimize signal reflections.
    • The recommended power-up sequence for the CY7C1314KV18-250BZXI is to apply power to the VDDQ pins first, followed by the VDD pins. This ensures that the internal voltage regulators are powered up correctly.
    • The ZQ pin on the CY7C1314KV18-250BZXI is an internal impedance calibration pin. It should be connected to a 240-ohm resistor to ground to enable internal impedance calibration.
    • The maximum current rating for the VDD pins is 1.5A, and for the VDDQ pins is 2.5A. Ensure that the power supply and PCB design can handle these current requirements.
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