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    Part Img CY14B108L-BA25XIT datasheet by Cypress Semiconductor

    • 8 Mbit (1024K x 8/512K x 16) nvSRAM; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: FBGA
    • Original
    • Yes
    • Unknown
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
    • Find it at Findchips.com

    CY14B108L-BA25XIT datasheet preview

    CY14B108L-BA25XIT Frequently Asked Questions (FAQs)

    • The CY14B108L-BA25XIT can operate from -40°C to +85°C, making it suitable for industrial and automotive applications.
    • To ensure data integrity, Cypress recommends using a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory. Additionally, use a capacitor on the VCC pin to filter out noise and voltage droops.
    • Cypress recommends storing the CY14B108L-BA25XIT in a dry, cool place with a relative humidity of 60% or less, and at a temperature range of 10°C to 30°C. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.
    • The CY14B108L-BA25XIT is not designed to operate in radiation-intensive environments. If your application requires radiation tolerance, consider using a radiation-hardened device or consult with Cypress for custom solutions.
    • The Hold pin (HOLD#) is an active low input that allows the device to be paused during a read or write operation. To handle the Hold pin during normal operation, tie it to VCC or use a pull-up resistor to ensure it remains high. This will prevent accidental holds and ensure normal device operation.
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