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    Part Img CY14B104NA-BA25XI datasheet by Cypress Semiconductor

    • 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
    • Original
    • Yes
    • Yes
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY14B104NA-BA25XI datasheet preview

    CY14B104NA-BA25XI Frequently Asked Questions (FAQs)

    • The CY14B104NA-BA25XI has an operating temperature range of -40°C to +85°C.
    • The device has a power-up and power-down sequence that must be followed to ensure proper operation. The power-up sequence is VCC, then VIO, and the power-down sequence is VIO, then VCC.
    • The recommended clock frequency for the CY14B104NA-BA25XI is up to 108 MHz.
    • A reset circuit can be implemented using a resistor and capacitor connected to the reset pin. The recommended values are a 1 kΩ resistor and a 0.1 μF capacitor.
    • The maximum current rating for the I/O pins is ±20 mA.
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