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    Part Img CSD18531Q5AT datasheet by Texas Instruments

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A 8SON
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    CSD18531Q5AT datasheet preview

    CSD18531Q5AT Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
    • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 1-μF ceramic capacitor is recommended for CBYP. Additionally, the input voltage should be filtered to reduce noise and ripple.
    • The maximum allowed power dissipation for the CSD18531Q5AT is 1.5 W. Exceeding this limit can cause the device to overheat and potentially fail.
    • A voltage supervisor or a voltage monitor can be used to detect overvoltage and undervoltage conditions. Additionally, a TVS diode or a zener diode can be used to clamp the input voltage to prevent damage from voltage spikes.
    • The CSD18531Q5AT is designed to operate at frequencies up to 1 MHz. Operating the device at frequencies above 1 MHz may result in reduced performance and increased power consumption.
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