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    Part Img CSD17552Q5A datasheet by Texas Instruments

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 17A 8SON
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    CSD17552Q5A datasheet preview

    CSD17552Q5A Frequently Asked Questions (FAQs)

    • Texas Instruments provides a recommended PCB layout in the datasheet, but it's essential to follow good PCB design practices, such as keeping the high-current paths short and wide, using thermal vias, and separating the high-frequency and low-frequency circuits.
    • To ensure the device operates within the SOA, monitor the voltage, current, and temperature of the device. Use the datasheet's SOA graph to determine the maximum allowed voltage and current for a given temperature. Implement overcurrent protection, undervoltage lockout, and thermal monitoring to prevent damage.
    • Texas Instruments recommends using a gate driver with a high current capability, such as the UCC27531 or UCC37322, to ensure fast switching times and minimize power losses. The gate driver should be able to provide a peak current of at least 1 A to 2 A.
    • To handle the high di/dt and dv/dt ratings, use a snubber circuit or a gate driver with built-in slew rate control. This will help reduce electromagnetic interference (EMI) and prevent voltage overshoots. Additionally, ensure the PCB layout is designed to minimize parasitic inductance and capacitance.
    • The thermal resistance of the CSD17552Q5A is specified in the datasheet. To calculate the junction temperature, use the formula: Tj = Ta + (RθJA * Pd), where Ta is the ambient temperature, RθJA is the thermal resistance, and Pd is the power dissipation. Ensure proper thermal design and heat sinking to keep the junction temperature within the recommended range.
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