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    Part Img CSD16406Q3 datasheet by Texas Instruments

    • CSD16406 - N-Channel NexFET Power MOSFET 8-SON -55 to 150
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    CSD16406Q3 datasheet preview

    CSD16406Q3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the CSD16406Q3 involves keeping the high-current paths short and wide, using multiple vias for heat dissipation, and separating the high-frequency and low-frequency circuits. TI provides a recommended layout in the datasheet and application notes.
    • To optimize the gate drive circuit, ensure the gate drive voltage is within the recommended range (10-15V), use a low-impedance gate drive circuit, and add a gate resistor to slow down the turn-on and turn-off times to reduce EMI. TI provides a recommended gate drive circuit in the datasheet.
    • The maximum allowed junction temperature for the CSD16406Q3 is 150°C. To ensure you don't exceed it, use a thermal pad or heat sink, ensure good airflow, and monitor the device temperature using a thermocouple or thermal sensor.
    • Use a voltage regulator or a voltage supervisor to ensure the input voltage is within the recommended range (4.5-18V). Add overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage from voltage transients or faults.
    • The recommended operating frequency range for the CSD16406Q3 is up to 1 MHz. Operating at higher frequencies can reduce the device's performance and increase power losses. TI provides guidance on frequency-dependent performance in the datasheet.
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