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    Part Img CSD16401Q5T datasheet by Texas Instruments

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 100A 8VSON
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    CSD16401Q5T datasheet preview

    CSD16401Q5T Frequently Asked Questions (FAQs)

    • A good PCB layout for the CSD16401Q5T involves keeping the input and output traces short and wide, using a solid ground plane, and placing decoupling capacitors close to the device. TI provides a recommended PCB layout in the datasheet and application notes.
    • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which includes setting the input voltage (VIN) to the recommended range (1.5V to 5.5V) and using an external resistor divider to set the gate-source voltage (VGS) to the recommended range (1.5V to 3.5V).
    • The maximum power dissipation of the CSD16401Q5T is dependent on the package type and thermal design. For the QFN package, the maximum power dissipation is approximately 2.5W. However, this value can be increased with proper thermal design and heat sinking.
    • To protect the CSD16401Q5T from overvoltage and overcurrent conditions, use external protection devices such as TVS diodes, zener diodes, or fuses. Additionally, ensure that the input voltage and current are within the recommended operating ranges specified in the datasheet.
    • The recommended operating frequency range for the CSD16401Q5T is up to 100 kHz, although it can operate at higher frequencies with proper design and layout considerations.
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