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    Part Img BYW29ED-200,118 datasheet by NXP Semiconductors

    • BYW29ED-200 - DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.80
    • 8541.10.00.80
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    BYW29ED-200,118 datasheet preview

    BYW29ED-200,118 Frequently Asked Questions (FAQs)

    • NXP recommends a PCB layout with a large copper area connected to the tab of the device, and multiple vias to the bottom layer to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
    • To ensure reliability, follow NXP's recommended derating guidelines for junction temperature, and consider using a heat sink or thermal interface material to reduce thermal resistance. Also, ensure proper soldering and handling to prevent damage.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to limit it to ±15V to ensure reliable operation and prevent damage.
    • While the BYW29ED-200,118 can be used in switching applications, it's not recommended for high-frequency switching (>100 kHz) due to its relatively high gate charge and internal gate resistance, which can lead to increased power losses and reduced efficiency.
    • Handle the device with ESD-protective equipment, such as wrist straps and mats, and ensure that the PCB design includes ESD protection components, such as TVS diodes or resistors, to prevent damage from static electricity.
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