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    BYT30P-1000 datasheet by STMicroelectronics

    • FAST RECOVERY RECTIFIER DIODE
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.10.00.80
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    BYT30P-1000 datasheet preview

    BYT30P-1000 Frequently Asked Questions (FAQs)

    • STMicroelectronics recommends a PCB layout with a large copper area connected to the tab of the device to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the copper area should be connected to a heat sink or a metal plate to further improve thermal performance.
    • To ensure proper biasing, the BYT30P-1000 requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) not exceeding 1000V. The recommended gate resistor value is between 1kΩ and 10kΩ, and the device should be operated within the safe operating area (SOA) to prevent damage.
    • When paralleling multiple BYT30P-1000 devices, it's essential to ensure that each device has an identical thermal environment, and the gate-source voltage is synchronized to prevent uneven current sharing. Additionally, the devices should be matched for optimal performance, and the PCB layout should be designed to minimize inductance and resistance.
    • To protect the BYT30P-1000 from overvoltage and overcurrent conditions, a voltage clamp or a transient voltage suppressor (TVS) can be used to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
    • When driving the BYT30P-1000 with a high-frequency signal, it's essential to minimize the gate resistance and inductance to prevent ringing and oscillations. A gate driver with a high current capability and a short rise and fall time is recommended, and the PCB layout should be designed to minimize parasitic inductance and capacitance.
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