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    Part Img BUZ11 datasheet by STMicroelectronics

    • N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • Find it at Findchips.com
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    BUZ11 datasheet preview

    BUZ11 Frequently Asked Questions (FAQs)

    • The BUZ11 is designed to operate up to 100 kHz, but it can be used at higher frequencies with proper PCB design and layout considerations.
    • To ensure proper biasing, make sure to follow the recommended voltage and current ratings, and use a suitable gate driver or bootstrap circuit to provide a stable voltage supply to the gate.
    • The maximum power dissipation of the BUZ11 is dependent on the package type and thermal design. For the TO-220 package, the maximum power dissipation is around 125W, while for the TO-263 package, it is around 150W.
    • To protect the BUZ11 from overvoltage and overcurrent conditions, use a suitable voltage regulator and current limiter, and consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to your design.
    • The recommended gate resistance for the BUZ11 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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