Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUX86P datasheet by Philips Semiconductors

    • Silicon Diffused Power Transistor
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • Powered by Findchips Logo Findchips

    BUX86P datasheet preview

    BUX86P Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the BUX86P is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the application note AN11143, which provides SOA curves for similar devices. As a general rule, it's essential to ensure that the device operates within the specified voltage and current ratings to prevent damage.
    • The thermal resistance (Rth) for the BUX86P can be calculated using the formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for specific packages and mounting conditions. For example, the Rth(j-a) for the TO-220 package is 2.5°C/W.
    • The recommended storage temperature range for the BUX86P is -40°C to 150°C, as specified in the datasheet. It's essential to store the devices within this range to prevent damage and ensure reliability.
    • Yes, the BUX86P can be used in switching applications due to its high switching speed and low saturation voltage. However, it's crucial to ensure that the device is operated within the specified voltage and current ratings, and that the switching frequency is within the recommended range.
    • The BUX86P has a human body model (HBM) ESD rating of 2 kV. To handle ESD protection, it's recommended to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider implementing ESD protection circuits in your design to prevent damage during handling and operation.
    Supplyframe Tracking Pixel