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    Part Img BUV26 datasheet by STMicroelectronics

    • MEDIUM POWER NPN SILICON TRANSISTOR - Pol=NPN / Pkg=TO220 / Vceo=90 / Ic=14 / Hfe=10min / fT(Hz)=- / Pwr(W)=65
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
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    BUV26 datasheet preview

    BUV26 Frequently Asked Questions (FAQs)

    • STMicroelectronics recommends a PCB layout with a solid ground plane, short traces, and minimal vias to reduce noise and parasitic inductance. A 4-layer PCB with a dedicated power plane and a separate ground plane is recommended.
    • To ensure reliable operation of BUV26 in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, reducing power dissipation, and ensuring good airflow. Additionally, the device should be operated within its specified temperature range (-40°C to 125°C).
    • To prevent damage from electrostatic discharge (ESD), it is recommended to handle BUV26 devices with proper ESD protection measures, such as using an ESD wrist strap, ESD mat, or ESD bag. Additionally, the device should be stored in a conductive bag or container to prevent static buildup.
    • Yes, BUV26 can be used in switching power supply applications, but it is essential to ensure that the device is operated within its specified voltage and current ratings. Additionally, proper snubber circuits and layout techniques should be used to minimize electromagnetic interference (EMI) and ensure reliable operation.
    • To troubleshoot issues with BUV26, it is recommended to use a combination of measurement tools, such as oscilloscopes, multimeters, and current probes. Analyze the device's input and output waveforms, voltage and current levels, and temperature to identify the root cause of the issue. Consult the datasheet and application notes for guidance on troubleshooting and debugging techniques.
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