BUK9E06-55A,127 datasheet
by NXP Semiconductors
- TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack
- Original
- Yes
- Unknown
- Transferred
- Find it at Findchips.com
