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BUK962R8-30B
datasheet
by NXP Semiconductors
Description
BUK962R8-30B - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 35 nC; RDS(on): 2.4@10V2.8@5V3@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 30 V
Datasheet Type
Original
RoHS
Yes
Pb Free
Yes
Lifecycle
Transferred
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BUK962R8-30B,118
BUK962R8-30B,118
BUK962R8-30B
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