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    BUK962R8-30B datasheet by NXP Semiconductors

    • BUK962R8-30B - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 35 nC; RDS(on): 2.4@10V2.8@5V3@4.5V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 30 V
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    BUK962R8-30B datasheet preview

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