BUK9607-30B datasheet by NXP Semiconductors

Description BUK9607-30B - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 13 nC; RDS(on): 5@10V7@5V9@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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BUK9607-30B,118

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