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    BUK9607-30B/T3 datasheet by NXP Semiconductors

    • TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 13 nC; R<sub>DS(on)</sub>: 5@10V7@5V9@4.5V mOhm; Thermal Resistance: 0.95 K/W; V<sub>DS</sub>max: 30 V
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    BUK9607-30B/T3 datasheet preview

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