BUK9606-55B datasheet by NXP Semiconductors

Description BUK9606-55B - N-channel TrenchMOS(tm) logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 5.4@10V6.0@5V6.4@4.5V mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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BUK9606-55B,118

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