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    Part Img BUK92150-55A,118 datasheet by NXP Semiconductors

    • TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 11 A; Q<sub>gd</sub> (typ): 2.6 nC; R<sub>DS(on)</sub>: 137@10V150@5V161@4.5V mOhm; Thermal Resistance: 4.1 K/W; V<sub>DS</sub>max: 55 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BUK92150-55A,118 datasheet preview

    BUK92150-55A,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the BUK92150-55A,118 is -40°C to 150°C.
    • To ensure reliability, it's essential to follow proper thermal design and layout guidelines, including providing adequate heat sinking, minimizing thermal resistance, and using a suitable thermal interface material.
    • The recommended gate drive voltage for the BUK92150-55A,118 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • To protect the device, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, in conjunction with a suitable controller or monitoring circuit.
    • The maximum allowable power dissipation for the BUK92150-55A,118 is 150W, but this can be affected by factors such as ambient temperature, thermal resistance, and heat sinking.
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