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    Part Img BUK7635-55A,118 datasheet by NXP Semiconductors

    • TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 35 A; Q<sub>gd</sub> (typ): 9 nC; R<sub>DS(on)</sub>: 35@10V mOhm; Thermal Resistance: 1.7 K/W; V<sub>DS</sub>max: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BUK7635-55A,118 datasheet preview

    BUK7635-55A,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the BUK7635-55A,118 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.
    • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material. The device's thermal resistance (Rth(j-a)) is 2.5 K/W, and the maximum junction temperature (Tj) is 150°C. A heat sink with a thermal resistance of less than 2.5 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a suitable thermal interface material.
    • For optimal performance and to minimize electromagnetic interference (EMI), it's recommended to follow a 4-layer PCB design with a solid ground plane, and to keep the power traces as short and wide as possible. Additionally, place decoupling capacitors close to the device's power pins, and use a common ground point for all components. Refer to NXP's application notes and PCB design guidelines for more information.
    • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider adding external protection components such as TVS diodes or zener diodes to clamp voltage transients and spikes.
    • The recommended gate drive voltage for the BUK7635-55A,118 is between 10 V and 15 V, with a maximum gate current of 2 A. A gate driver with a high current capability and a fast rise time (typically <10 ns) is recommended to ensure proper switching performance.
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