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    Part Img BUK7611-55A,118 datasheet by NXP Semiconductors

    • TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 26 nC; R<sub>DS(on)</sub>: 11@10V mOhm; Thermal Resistance: 0.9 K/W; V<sub>DS</sub>max: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BUK7611-55A,118 datasheet preview

    BUK7611-55A,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the BUK7611-55A,118 is -40°C to 150°C.
    • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. Typically, a voltage supply of 15V to 30V is recommended, with a current limit of 1A to 2A, depending on the application.
    • For optimal thermal management, use a PCB with a thermal pad and ensure good heat dissipation. Keep the device away from heat sources and use thermal vias to dissipate heat. Follow NXP's recommended PCB layout guidelines for the TO-220 package.
    • Use a voltage regulator or a voltage limiter to prevent overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • Use a gate driver IC with a high current capability (e.g., 1A to 2A) and a voltage rating that matches the device's gate-source voltage. Ensure the gate driver is properly biased and has a low output impedance to minimize ringing and oscillations.
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