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    Part Img BUK7275-100A,118 datasheet by NXP Semiconductors

    • TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 21 A; Q<sub>gd</sub> (typ): 9 nC; R<sub>DS(on)</sub>: 75@10V mOhm; Thermal Resistance: 1.7 K/W; V<sub>DS</sub>max: 100 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BUK7275-100A,118 datasheet preview

    BUK7275-100A,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the BUK7275-100A,118 is -40°C to 150°C.
    • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and use a suitable gate driver circuit to provide a stable voltage supply to the device.
    • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the heat sink. Follow NXP's recommended PCB layout guidelines and thermal management recommendations.
    • Yes, the BUK7275-100A,118 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper snubber design and layout to minimize ringing and EMI.
    • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to prevent damage to the device in case of overvoltage or overcurrent conditions.
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