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    Part Img BUK7212-55B,118 datasheet by NXP Semiconductors

    • Trenchmos standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 12 nC; R<sub>DS(on)</sub>: 12@10V mOhm; Thermal Resistance: 0.95 K/W; V<sub>DS</sub>max: 55 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BUK7212-55B,118 datasheet preview

    BUK7212-55B,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the BUK7212-55B,118 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.
    • To ensure proper biasing, follow the recommended operating conditions and application guidelines provided in the datasheet. This includes setting the correct gate-source voltage (VGS) and drain-source voltage (VDS) levels, as well as providing a stable power supply and proper thermal management.
    • For optimal thermal performance, it's recommended to use a multi-layer PCB with a solid ground plane and a thermal pad connected to the drain pin. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink with a low thermal resistance. Follow the recommended PCB layout guidelines and thermal management strategies provided in the datasheet and application notes.
    • To protect the device from overvoltage and overcurrent conditions, use a suitable voltage regulator and overvoltage protection (OVP) circuit. Implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC. Ensure the protection circuits are designed to respond quickly to fault conditions and are capable of handling the maximum expected voltage and current levels.
    • The recommended gate drive circuits and components for the BUK7212-55B,118 include a gate driver IC with a suitable output current capability, a gate resistor (Rg) in the range of 10-100 ohms, and a gate-source capacitor (Cgs) in the range of 1-10 nF. Ensure the gate drive circuit is designed to provide a fast rise and fall time, and is capable of handling the maximum expected voltage and current levels.
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