BUJ100,412 datasheet by NXP Semiconductors

Description Silicon Diffused Power Transistor - I<sub>C (DC)</sub>: 1 A; I<sub>C (SAT)</sub>: 0.5 A; tf<sub>(max)</sub>: 0.05s; V<sub>CESM</sub>: 700 V; Package: week 5, 2005
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
Price & Stock
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Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

934055572412 934055572412 BUJ100AT 934056688116 BUJ100BT/R

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